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20032020

Research output per year

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Press / Media

Beryllium-doped Gallium Nitride: The Next Generation of Power Electronics?

Filip Tuomisto

13/11/2017

1 item of Media coverage

Press/Media: Media appearance

Beryllium-Doped Gallium-Nitride for Higher-Power Devices

Filip Tuomisto

10/11/2017

1 item of Media coverage

Press/Media: Media appearance

Beryllium-Gallium Nitride Combo Offers More Power to Electronic Devices

Filip Tuomisto

13/11/2017

1 item of Media coverage

Press/Media: Media appearance

Doped-Up Semiconductors Lead to Next-Gen Electronics

Filip Tuomisto

10/11/2017

1 item of Media coverage

Press/Media: Media appearance

Electrically Active Defects which Hamper Modern Electronics

Filip Tuomisto

23/10/2018

1 item of Media coverage

Press/Media: Media appearance

Professor of Nuclear Engineering awarded Espoo’s Congress Ambassador 2015

Filip Tuomisto

28/08/201531/08/2015

3 items of Media coverage

Press/Media: Media appearance

Professor of Nuclear Engineering awarded Espoo’s Congress Ambassador 2015 »

Filip Tuomisto

03/09/2015

1 item of Media coverage

Press/Media: Media appearance

Researchers create gallium nitride semiconductors doped with beryllium

Filip Tuomisto

10/11/2017

1 item of Media coverage

Press/Media: Media appearance

The next generation of power electronics? Gallium nitride doped with beryllium

Filip Tuomisto

09/11/201710/11/2017

3 items of Media coverage

Press/Media: Media appearance

The Next Generation of Power Electronics? Gallium Nitride Doped with Beryllium

Filip Tuomisto

10/11/2017

1 item of Media coverage

Press/Media: Media appearance

The Next Generation Of Power Electronics? Gallium Nitride Doped With Beryllium

Filip Tuomisto

09/11/2017

1 item of Media coverage

Press/Media: Media appearance