Research output per year
Research output per year
Personal profile
Artistic and research interests
My scientific research work focuses on the fundamental connection between macroscopic properties and atomic-level structure of materials. The methodology of choice is positron annihilation spectroscopy that is particularly suitable for lattice defect characterization in solids. The power of positron spectroscopies lies in (i) the selective sensitivity to open volume structures, (ii) the possibility of studying materials of any type (conductive, insulating, hard, soft, crystalline, or porous) and (iii) the possibility of direct comparison of theoretical calculations and experimental observations. My group is is one of the world’s leading teams in developing the methodology, instrumentation, applications and theory of positron annihilation spectroscopy of semiconductor materials and devices.
- ResearcherID: B-8189-2008
Expertise related to UN Sustainable Development Goals
In 2015, UN member states agreed to 17 global Sustainable Development Goals (SDGs) to end poverty, protect the planet and ensure prosperity for all. This person’s work contributes towards the following SDG(s):
Education/Academic qualification
Doctoral degree, Engineering and Technology, Helsinki University of Technology
Award Date: 18 Oct 2005
Master's degree, Engineering and Technology, Helsinki University of Technology
Award Date: 12 Nov 2002
External positions
Chair of the Executive Board, Finnish Consortium for Radiation Safety Research (CORES)
Dec 2018 → Dec 2019
Director of the Technology Programme, Helsinki Institute of Physics
1 Jan 2018 → 31 Dec 2022
Vice-President, European Nuclear Education Network
Mar 2016 → Mar 2019
Keywords
- Positron annihilation spectroscopy
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Network
Recent external collaboration on country/territory level. Dive into details by clicking on the dots or
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Open volume defects in ultra-thin TiO2 layers embedded in VMCO-like samples studied with positron annihilation spectroscopy
Khanam, A., Slotte, J., Tuomisto, F., Subhechha, S., Popovici, M. & Kar, G. S., 24 Jun 2022, In: Journal of Applied Physics. 131, 24, 6 p., 245301.Research output: Contribution to journal › Article › Scientific › peer-review
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Growth of highly conductive Al-rich AlGaN:Si with low group-III vacancy concentration
Almogbel, A. S., Zollner, C. J., Saifaddin, B. K., Iza, M., Wang, J., Yao, Y., Wang, M., Foronda, H., Prozheev, I., Tuomisto, F., Albadri, A., Nakamura, S., DenBaars, S. P. & Speck, J. S., 1 Sep 2021, In: AIP ADVANCES. 11, 9, 8 p., 095119.Research output: Contribution to journal › Article › Scientific › peer-review
Open AccessFile6 Citations (Scopus)24 Downloads (Pure) -
In Situ Positron Annihilation Spectroscopy Analysis on Low-Temperature Irradiated Semiconductors, Challenges and Possibilities
Slotte, J., Kilpeläinen, S., Segercrantz, N., Mizohata, K., Räisänen, J. & Tuomisto, F., Jan 2021, In: Physica Status Solidi (A) Applications and Materials Science. 218, 1, 6 p., 2000232.Research output: Contribution to journal › Article › Scientific › peer-review
Open AccessFile2 Citations (Scopus)52 Downloads (Pure) -
Interplay of vacancies, hydrogen, and electrical compensation in irradiated and annealed n-type β-Ga2O3
Karjalainen, A., Weiser, P. M., Makkonen, I., Reinertsen, V. M., Vines, L. & Tuomisto, F., 28 Apr 2021, In: Journal of Applied Physics. 129, 16, 8 p., 165702.Research output: Contribution to journal › Article › Scientific › peer-review
Open AccessFile8 Citations (Scopus)7 Downloads (Pure) -
Split Ga vacancies: Abundant defects in β-Ga2O3
Tuomisto, F., Karjalainen, A. & Makkonen, I., 2021, Oxide-Based Materials and Devices XII. Rogers, D. J., Look, D. C. & Teherani, F. H. (eds.). 2585462. (Proceedings of SPIE - The International Society for Optical Engineering; vol. 11687).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review
Open AccessFile1 Citation (Scopus)34 Downloads (Pure)
Projects
- 12 Finished
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IDS-FunMat-Inno: International Doctoral School in Functional Materials and Innovation
Tuomisto, F. & Ala-Heikkilä, J.
01/01/2019 → 31/12/2019
Project: EU: EIT
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CRYSTRAP: Charge traps in crystalline matter for future technologies
Tuomisto, F., Karjalainen, A., Slotte, J., Heikkinen, T. & Vancraeyenest, A.
01/09/2018 → 31/08/2019
Project: Academy of Finland: Other research funding
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IDS-FunMat-Inno: International Doctoral School in Functional Materials and Innovation
Tuomisto, F. & Ala-Heikkilä, J.
01/01/2018 → 31/12/2018
Project: EU: Framework programmes funding
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HIP BIGS
Tuomisto, F., Prozheev, I., Karjalainen, A., Bes, R. & Heikkinen, T.
01/01/2018 → 31/12/2020
Project: Other external funding: Other public funding
Prizes
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2015 EspooAmbassador
Tuomisto, Filip (Recipient), 2015
Prize: Award or honor granted for academic or artistic career
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2016 Chevalier dans l’Ordre des Palmes Académiques
Tuomisto, Filip (Recipient), 2016
Prize: Award or honor granted for academic or artistic career
Activities
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David Scanlon
Filip Tuomisto (Host)
5 May 2017 → 8 May 2017Activity: Hosting a visitor types › Hosting an academic visitor
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External assessment for promotion to Reader, University of Dundee, UK
Filip Tuomisto (Examiner)
Jun 2017Activity: Academic assessments › Statement of assessment of professorship
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Mark DeHart
Filip Tuomisto (Host)
17 May 2017 → 21 May 2017Activity: Hosting a visitor types › Hosting an academic visitor
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Evaluation of a docentship, University of Helsinki
Filip Tuomisto (Examiner)
2017Activity: Academic assessments › Statement of assessment of docentship
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Christopher Young
Filip Tuomisto (Host)
3 Dec 2017 → 6 Dec 2017Activity: Hosting a visitor types › Hosting an academic visitor
Press / Media
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Electrically Active Defects which Hamper Modern Electronics
23/10/2018
1 item of Media coverage
Press/Media: Media appearance
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Beryllium-Gallium Nitride Combo Offers More Power to Electronic Devices
13/11/2017
1 item of Media coverage
Press/Media: Media appearance
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Beryllium-doped Gallium Nitride: The Next Generation of Power Electronics?
13/11/2017
1 item of Media coverage
Press/Media: Media appearance
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Doped-Up Semiconductors Lead to Next-Gen Electronics
10/11/2017
1 item of Media coverage
Press/Media: Media appearance
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Researchers create gallium nitride semiconductors doped with beryllium
10/11/2017
1 item of Media coverage
Press/Media: Media appearance