Semiconductor Science and Technology

Research outputs

  1. 2019
  2. Published

    Printed single-walled carbon-nanotubes-based counter electrodes for dye-sensitized solar cells with copper-based redox mediators

    Hashmi, S. G., Sonai, G. G., Iftikhar, H., Lund, P. D. & Nogueira, A. F., Oct 2019, In : Semiconductor Science and Technology. 34, 10, 13 p., 105001.

    Research output: Contribution to journalArticleScientificpeer-review

  3. 2018
  4. Published

    Microstructure and optical properties of ultra-thin NiO films grown by atomic layer deposition

    Hagen, D. J., Tripathi, T. S., Terasaki, I. & Karppinen, M., 16 Oct 2018, In : Semiconductor Science and Technology. 33, 11, 115015.

    Research output: Contribution to journalArticleScientificpeer-review

  5. Published

    Influence of photo-generated carriers on current spreading in double diode structures for electroluminescent cooling

    Radevici, I., Tiira, J., Sadi, T. & Oksanen, J., 29 Mar 2018, In : Semiconductor Science and Technology. 33, 5, 05LT01.

    Research output: Contribution to journalArticleScientificpeer-review

  6. 2017
  7. Published

    Titanium dioxide thin films by atomic layer deposition: A review

    Niemelä, J. P., Marin, G. & Karppinen, M., 23 Aug 2017, In : Semiconductor Science and Technology. 32, 9, 093005.

    Research output: Contribution to journalReview ArticleScientificpeer-review

  8. Published

    MOVPE growth of GaN on 6-inch SOI-substrates: Effect of substrate parameters on layer quality and strain

    Lemettinen, J., Kauppinen, C., Rudzinski, M., Haapalinna, A., Tuomi, T. O. & Suihkonen, S., 6 Mar 2017, In : Semiconductor Science and Technology. 32, 4, 10 p., 045003.

    Research output: Contribution to journalArticleScientificpeer-review

  9. 2016
  10. Published

    Highly mismatched GaN1-xSbx alloys: Synthesis, structure and electronic properties

    Yu, K. M., Sarney, W. L., Novikov, S. V., Segercrantz, N., Ting, M., Shaw, M., Svensson, S. P., Martin, R. W., Walukiewicz, W. & Foxon, C. T., 28 Jun 2016, In : Semiconductor Science and Technology. 31, 8, p. 1-22 083001.

    Research output: Contribution to journalArticleScientificpeer-review

  11. 2015
  12. Published

    Temperature dependent 1/f noise characteristics of the Fe/GaN ferromagnetic Schottky barrier diode

    Kumar, A., Subramaniyam, N., Sopanen, M., Kumar, V. & Singh, R., 7 Sep 2015, In : Semiconductor Science and Technology. 30, 10, 7 p., 105022.

    Research output: Contribution to journalArticleScientificpeer-review

  13. Published

    Cation vacancies and electrical compensation in Sb-doped thin-film SnO2 and ZnO

    Korhonen, E., Prozheeva, V., Tuomisto, F., Bierwagen, O., Speck, J. S., White, M. E., Galazka, Z., Liu, H., Izyumskaya, N., Özgür, U. & 1 othersMorkoç, H., 19 Jan 2015, In : Semiconductor Science and Technology. 30, 2, p. 1-7 7 p., 024011.

    Research output: Contribution to journalArticleScientificpeer-review

  14. 2014
  15. Published

    Atomic layer deposition of ZnO: a review

    Tynell, T. & Karppinen, M., 2014, In : Semiconductor Science and Technology. 29, 4, p. 043001

    Research output: Contribution to journalReview ArticleScientificpeer-review

  16. 2012
  17. Published

    Enhancement of near-UV GaN LED light extraction efficiency by GaN/sapphire template patterning

    Ali, M., Riuttanen, L., Kruse, M., Suihkonen, S., Romanov, A. E., Törmä, P. T., Sopanen, M., Lipsanen, H., Odnoblyudov, M. A. & Bougrov, V. E., 2012, In : Semiconductor Science and Technology. 27, 8, p. 1-5 5 p., 082002.

    Research output: Contribution to journalArticleScientificpeer-review

  18. 2011
  19. Published

    Enhanced 1.3 µm luminescence from InGaAs self-assembled quantum dots with a GaAsN strain-compensating layer

    Nagarajan, S., Aierken, A., Jussila, H., Banerjee, K., Sopanen, M. & Lipsanen, H., 2011, In : Semiconductor Science and Technology. 26, 8, p. 1-4 4 p., 085029.

    Research output: Contribution to journalArticleScientificpeer-review

  20. 2009
  21. Published

    Vacancy Engineering by He Induced Nanovoids in Crystalline Si

    Kilpeläinen, S., Kuitunen, K., Tuomisto, F., Slotte, J., Bruno, E., Mirabella, S. & Priolo, F., 5 Dec 2009, In : Semiconductor Science and Technology. 24, 1, p. 1-4 4 p., 015005.

    Research output: Contribution to journalArticleScientificpeer-review

  22. Published

    The effect of a material growth technique on ion implanted Mn diffusion in GaAs

    Koskelo, O., Räisänen, J., Tuomisto, F. & Sadowski, J., 6 Mar 2009, In : Semiconductor Science and Technology. 24, 4, p. 1-5 5 p., 045011.

    Research output: Contribution to journalArticleScientificpeer-review

  23. 2007
  24. Published

    Femtosecond versus nanosecond laser micro-machining of InP: a nondestructive three-dimensional analysis of strain

    Xu, L., Lowney, D., McNally, P. J., Borowiec, A., Lankinen, A., Tuomi, T. O. & Danilewsky, A. N., 2007, In : Semiconductor Science and Technology. 22, p. 970-979

    Research output: Contribution to journalArticleScientificpeer-review

  25. 2006
  26. Published

    Optical and structural studies of high-quality bulk-like GaN grown by HVPE on a MOVPE AlN buffer layer

    Gogova, D., Siche, D., Fornari, R., Monemar, B., Gibart, P., Dobos, L., Pecz, B., Tuomisto, F., Bayazitov, R. & Zollo, G., 3 Apr 2006, In : Semiconductor Science and Technology. 21, 5, p. 702-708 7 p.

    Research output: Contribution to journalArticleScientificpeer-review

  27. 2005
  28. Published

    Gettering in SOI wafers: experimental studies and modeling

    Istratov, A., Väinölä, H., Huber, W. & Weber, E., 2005, In : Semiconductor Science and Technology. 20, 6, p. 568-575

    Research output: Contribution to journalArticleScientificpeer-review

  29. 2004
  30. Published

    Comparison of induced stresses due to electroless versus sputtered copper interconnect technology

    McNally, P. J., Kanatharana, J., Toh, B. H. W., McNeill, D. W., Tuomi, T., Danilewsky, A. H., Knuuttila, L., Riikonen, J. & Toivonen, J., 2004, In : Semiconductor Science and Technology. 19, p. 1280-1284

    Research output: Contribution to journalArticleScientificpeer-review

  31. Published

    The electron effective mass at the bottom og the GaNAs conduction band

    Toivonen, J., Skierbiszewski, C., Gorczyca, I., Lepkowski, J. & Borysiuk, J., 2004, In : Semiconductor Science and Technology. 19, p. 1189-1195

    Research output: Contribution to journalArticleScientificpeer-review

  32. 2003
  33. Published

    Integrated circuit process control monitoring (PCM) data and wafer yield analysed by using synchrotron x-ray topographic measurements

    Karilahti, M., Tuomi, T. & McNally, P. J., 2003, In : Semiconductor Science and Technology. 18, p. 45-55

    Research output: Contribution to journalArticleScientificpeer-review

  34. 2002
  35. Published

    Investigation of strain induced effects in silicon wafers due to proximity rapid thermal processing using micro-Raman spectroscopy and synhrotron x-ray topography

    Lowney, D., Perova, T. S., Nolan, M., McNally, P. J., Moore, R. A., Gamble, H. S., Tuomi, T., Rantamäki, R. & Danilewsky, A. N., 2002, In : Semiconductor Science and Technology. 17, p. 1081-1089

    Research output: Contribution to journalArticleScientificpeer-review

  36. 1998
  37. Published

    An evalution of liquid phase epitaxial InGaAs/InAs heterostructures for infra-red devices using synchrotron x-ray topography

    McNally, P. J., Curley, J., Krier, A., Mao, Y., Richardson, J., Tuomi, T., Taskinen, M., Rantamäki, R., Prieur, E. & Danilewsky, A., 1998, In : Semiconductor Science and Technology. 13, p. 345-349

    Research output: Contribution to journalArticleScientificpeer-review

ID: 387951