Journal of Materials Science: Materials in Electronics

Research outputs

  1. 2019
  2. Published

    Influence of metal assisted chemical etching time period on mesoporous structure in as-cut upgraded metallurgical grade silicon for solar cell application

    Venkatesan, R., Mayandi, J., Pearce, J. M. & Venkatachalapathy, V., May 2019, In : Journal of Materials Science: Materials in Electronics. 30, 9, p. 8676-8685 10 p.

    Research output: Contribution to journalArticleScientificpeer-review

  3. 2018
  4. Published

    The effect of platinum contact metallization on Cu/Sn bonding

    Rautiainen, A., Ross, G., Vuorinen, V., Dong, H. & Paulasto-Kröckel, M., 16 Jul 2018, In : Journal of Materials Science: Materials in Electronics. 11 p.

    Research output: Contribution to journalArticleScientificpeer-review

  5. 2016
  6. Published

    Effect of Cu doping on TiO2 nanoparticles and its photocatalytic activity under visible light

    Krishnakumar, V., Boobas, S., Jayaprakash, J., Rajaboopathi, M., Han, B. & Louhi-Kultanen, M., 1 Jul 2016, In : Journal of Materials Science: Materials in Electronics. 27, 7, p. 7438-7447 10 p.

    Research output: Contribution to journalArticleScientificpeer-review

  7. 2013
  8. Published
  9. 2012
  10. Published

    Effect of Ti on the interfacial reaction between Sn and Cu

    Vuorinen, V., Dong, H. & Laurila, T., 2012, In : Journal of Materials Science: Materials in Electronics. 23, 1, p. 68-74

    Research output: Contribution to journalArticleScientificpeer-review

  11. Published

    Interfacial reactions between SnAg1.0Ti and Ni metallization

    Laurila, T., Dong, H. & Vuorinen, V., 2012, In : Journal of Materials Science: Materials in Electronics. 23, XX, p. 2030-2034

    Research output: Contribution to journalArticleScientificpeer-review

  12. 2008
  13. Published

    Dislocations at the interface between sapphire and GaN

    Lankinen, A., Lang, T., Suihkonen, S., Svensk, O., Säynätjoki, A., Tuomi, T. O., McNally, P. J., Odnoblyudov, M., Bougrov, V., Danilewsky, A. N. & 2 othersBergman, P. & Simon, R., Feb 2008, In : Journal of Materials Science: Materials in Electronics. 19, 2, p. 143-148 6 p.

    Research output: Contribution to journalArticleScientificpeer-review

  14. Published

    In-situ optical reflectance and synchrotron X-ray topography study of defects in epitaxial dilute GaAsN on GaAs

    Reentila, O., Lankinen, A., Mattila, M., Saynatjoki, A., Tuomi, T. O., Lipsanen, H., "O'Reilly", L. & McNally, P. J., Feb 2008, In : Journal of Materials Science: Materials in Electronics. 19, 2, p. 137-142 6 p.

    Research output: Contribution to journalArticleScientificpeer-review

  15. Published

    Dislocations in GaAs p-i-n diodes grown by hydride vapour phase epitaxy

    Säynätjoki, A., Lankinen, A., Tuomi, T. O., McNally, P. J., Danilewsky, A., Zhilyaev, Y. & Fedorov, L., 2008, In : Journal of Materials Science: Materials in Electronics. 19, p. 149-154

    Research output: Contribution to journalArticleScientificpeer-review

  16. Published

    Gettering of iron in silicon by boron implantation

    Haarahiltunen, A., Talvitie, H., Savin, H., Anttila, O., Yli-Koski, M., Asghar, M. I. & Sinkkonen, J., 2008, In : Journal of Materials Science: Materials in Electronics. 19, 1, p. S41-S45

    Research output: Contribution to journalArticleScientificpeer-review

  17. 2007
  18. Published

    Characterisation of n-type gamma-CuCl on Si for UV optoelectronic applications

    "O'Reilly", L., Mitra, A., Lucas, F. O., Natarajan, G., McNally, P. J., Daniels, S., Lankinen, A., Lowney, D., Badley, A. L. & Cameron, D. C., 2007, In : Journal of Materials Science: Materials in Electronics. 18, p. 57-60

    Research output: Contribution to journalArticleScientificpeer-review

  19. 2005
  20. Published

    Synchrotron x-ray topography study of defects in indium antimonide p-i-n structures grown by metal organic vapour phase epitaxy

    Riikonen, J., Tuomi, T., Lankinen, A., Sormunen, J., Säynätjoki, A., Knuuttila, L., Lipsanen, H., McNally, P. J., Danilewsky, A., Sipilä, H. & 3 othersVaijärvi, S., Lumb, D. & Owens, A., Jul 2005, In : Journal of Materials Science: Materials in Electronics. 16, 7, p. 449-453 5 p.

    Research output: Contribution to journalArticleScientificpeer-review

  21. 2003
  22. Published

    Growth of GaAs on polycrystalline silicon-on-insulator

    Riikonen, J., Säynätjoki, A., Sopanen, M., Lipsanen, H. & Ahopelto, J., May 2003, In : Journal of Materials Science: Materials in Electronics. 14, 5, p. 403-405 3 p.

    Research output: Contribution to journalArticleScientificpeer-review

  23. Published

    In(Ga)As quantum dots on Ge substrate

    Knuuttila, L., Kainu, K., Sopanen, M. & Lipsanen, H., May 2003, In : Journal of Materials Science: Materials in Electronics. 14, 5, p. 349-352 4 p.

    Research output: Contribution to journalArticleScientificpeer-review

  24. Published

    Misfit dislocations in GaAsN/GaAs interface

    Toivonen, J., Tuomi, T., Riikonen, J., Knuuttila, L., Hakkarainen, T., Sopanen, M., Lipsanen, H., McNally, P. J., Chen, W. & Lowney, D., May 2003, In : Journal of Materials Science: Materials in Electronics. 14, 5, p. 267-270 4 p.

    Research output: Contribution to journalArticleScientificpeer-review

  25. Published

    Optical waveguides on polysilicon-on-insulator

    Säynätjoki, A., Riikonen, J., Lipsanen, H. & Ahopelto, J., May 2003, In : Journal of Materials Science: Materials in Electronics. 14, 5, p. 417-420 4 p.

    Research output: Contribution to journalArticleScientificpeer-review

  26. Published

    Photoluminescence study of strain induced GaInNAs/GaAs quantum dots

    Koskenvaara, H., Hakkarainen, T., Sopanen, M. & Lipsanen, H., May 2003, In : Journal of Materials Science: Materials in Electronics. 14, 5, p. 357-360 4 p.

    Research output: Contribution to journalArticleScientificpeer-review

  27. Published

    Correlating integrated circuit process induced strain and defects against device yield and process control monitoring data

    Karilahti, M., Tuomi, T., Rantamäki, R., McNally, P. J. & Danilewsky, A. N., 2003, In : Journal of Materials Science: Materials in Electronics. 14, p. 445-449

    Research output: Contribution to journalArticleScientificpeer-review

  28. Published

    Rapid thermal annealing of Cu/WNx/Si structures

    Lipsanen, A., Kuivalainen, P., Rauhala, E., Franssila, S. & Seppälä, A., 2003, In : Journal of Materials Science: Materials in Electronics. 14, p. 315-318

    Research output: Contribution to journalArticleScientificpeer-review

  29. Published

    Stress characterization of device layers and the underlying Si1-xGex virtual substrate with high resolution micro-Raman spectroscopy

    Chen, W. M., Dilliway, G. D. M., McNally, P. J., Tuomi, T., Willoughby, A. & Bonar, J., 2003, In : Journal of Materials Science: Materials in Electronics. 14, p. 307-312

    Research output: Contribution to journalArticleScientificpeer-review

  30. Published

    Tiled wing induced stress distribution in epitaxiallateral ovegrown GaN

    Chen, W. M., McNally, P. J., Jacobs, K., Tuomi, T., Kanatharana, J., Lowney, D., Knuuttila, L., Riikonen, J. & Toivonen, J., 2003, In : Journal of Materials Science: Materials in Electronics. 14, p. 283-286

    Research output: Contribution to journalArticleScientificpeer-review

  31. 2002
  32. Published

    Precise chemical analysis development for Si and GaAs surface

    Briantseva, N., Lebedeva, Z., Lioubtchenko, D., Nolan, M., Perova, T., Moor, A. & Berwick, K., 2002, In : Journal of Materials Science: Materials in Electronics. 13, 6, p. 315-318

    Research output: Contribution to journalArticleScientificpeer-review

  33. 2001
  34. Published

    Examination of the structural and optical failure of ultra bright LEDs under varying degrees of electrical stress using synchrotron x-ray topography and optical emission spectroscopy

    Lowney, D., McNally, P. J., O´Hare, M., Herbert, P. A. F., Tuomi, T., Rantamäki, R., Karilahti, M. & Danilewsky, A. N., 2001, In : Journal of Materials Science: Materials in Electronics. 12, p. 249-253

    Research output: Contribution to journalArticleScientificpeer-review

  35. 1999
  36. Published

    Monitoring of stress reduction in shallow trench isolation CMOS structures via synchrotron X-ray topography, electrical data and Raman spectroscopy

    McNally, P. J., Curley, J. W., Boldt, M., Reader, A., Tuomi, T., Rantamäki, R., Danilewsky, A. N. & DeWolf, I., 1999, In : Journal of Materials Science: Materials in Electronics. 10, p. 351-358

    Research output: Contribution to journalArticleScientificpeer-review

ID: 307009