Journal of Crystal Growth

Research outputs

  1. 2006
  2. Published

    Crystallization of bismuth titanate and bismuth silicate grown as thin films by atomic layer deposition

    Harjuoja, J., Väyrynen, S., Putkonen, M., Niinistö, L. & Rauhala, E., 2006, In : Journal of Crystal Growth. 286, 2, p. 376-383

    Research output: Contribution to journalArticleScientificpeer-review

  3. Published

    On the optical crystal properties of quantum-well GaIn(N)As/GaAs semiconductors grown by molecular-beam epitaxy

    Pavelescu, E-M., Slotte, J., Dhaka, V. D. S., Saarinen, K., Antohe, S., Cimpoca, G. & Pessa, M., 2006, In : Journal of Crystal Growth. 297, p. 33-37

    Research output: Contribution to journalArticleScientificpeer-review

  4. 2005
  5. Published

    Synchrotron x-ray topographic study of dislocations and stacking faults in InAs

    Lankinen, A., Tuomi, T., Riikonen, J., Knuuttila, L., Lipsanen, H., Sopanen, M., Danilewsky, A., McNally, J., "O'Reilly", L., Zhilyaev, Y. & 6 othersFedorov, L., Sipilä, H., Vaijärvi, S., Simon, R., Lumb, D. & Owens, A., 1 Oct 2005, In : Journal of Crystal Growth. 283, 3-4, p. 320-327 8 p.

    Research output: Contribution to journalArticleScientificpeer-review

  6. Published

    Batch cooling crystallization study based on in-line measurement of supersaturation and crystal size distribution

    Qu, H., Pöllänen, K., Louhi-Kultanen, M., Kilpiö, T., Oinas, P. & Kallas, J., 15 Feb 2005, In : Journal of Crystal Growth. 275, 1-2

    Research output: Contribution to journalArticleScientificpeer-review

  7. Published

    Gadolinium oxide thin films by atomic layer deposition

    Niinistö, J., Petrova, N., Putkonen, M., Niinistö, L., Arstila, K. & Sajavaara, T., 2005, In : Journal of Crystal Growth. 285, p. 191-200

    Research output: Contribution to journalArticleScientificpeer-review

  8. Published

    MOCVD growth of GaN islands by multistep nucleation layer technique

    Lang, T., Odnoblydov, M., Bourgrov, V. & Sopanen, M., 2005, In : Journal of Crystal Growth. 277, 1-4, p. 64-71

    Research output: Contribution to journalArticleScientificpeer-review

  9. 2004
  10. Published

    Passivation of GaAS surface by ultrathin epitaxial GaN layer

    Riikonen, J., Sormunen, J., Koskenvaara, H., Mattila, M., Sopanen, M. & Lipsanen, H., 10 Dec 2004, In : Journal of Crystal Growth. 272, 1-4, p. 621-626 6 p.

    Research output: Contribution to journalArticleScientificpeer-review

  11. Published

    Self assembled In(Ga)As islands on Ge substrate

    Knuuttila, L., Korkala, T., Sopanen, M. & Lipsanen, H., 10 Dec 2004, In : Journal of Crystal Growth. 272, 1-4, p. 221-226 6 p.

    Research output: Contribution to journalArticleScientificpeer-review

  12. Published

    GaN/GaAs(100) superlattices grown by metalorganic vapor phase epitaxy using dimethylhydrazine precursor

    Sormunen, J., Riikonen, J., Sopanen, M. & Lipsanen, H., 1 Oct 2004, In : Journal of Crystal Growth. 270, 3-4, p. 346-350 5 p.

    Research output: Contribution to journalArticleScientificpeer-review

  13. Published

    Characterization of mass-transport grown GaN by hydride vapour phase epitaxy

    Paskova, T., Paskov, P. P., Goldgas, S., Saarinen, K., Carlström, C. F., Wahab, Q. & Monemar, B., 2004, In : Journal of Crystal Growth. 273, p. 118-128

    Research output: Contribution to journalArticleScientificpeer-review

  14. Published

    Vacancy defects in epitaxial InN: Identification and electrical properties

    Laakso, A., Oila, J., Kemppinen, A., Saarinen, K., Egger, W., Liszkay, L., Sperr, P., Lu, H. & Schaff, W. J., 2004, In : Journal of Crystal Growth. 269, p. 41-49

    Research output: Contribution to journalArticleScientificpeer-review

  15. 2003
  16. Published

    Wavelength extension of GaInAs/GaIn(N)As quantum dot structures grown on GaAs

    Hakkarainen, T., Toivonen, J., Sopanen, M. & Lipsanen, H., Feb 2003, In : Journal of Crystal Growth. 248, p. 339-342 4 p.

    Research output: Contribution to journalArticleScientificpeer-review

  17. Published

    Dislocation analysis for heat-exchanger method grown sapphire with white beam synchrotron X-ray topography

    Chen, W. M., McNally, P. J., "Shvyd'ko", U. V., Tuomi, T., Danilewsky, A. N. & Lerche, M., 2003, In : Journal of Crystal Growth. 252, p. 113-119

    Research output: Contribution to journalArticleScientificpeer-review

  18. Published

    Solubility and crystallization of xylose isomerase from Streptomyces rubiginosus

    Vuolanto, A., Uotila, S., Leisola, M. & Visuri, K., 2003, In : Journal of Crystal Growth. 257, p. 403-411

    Research output: Contribution to journalArticleScientificpeer-review

  19. 2002
  20. Published

    GaInNAs quantum well structures for 1.55 µm emission on GaAs by atmospheric pressure metalorganic vapor phase epitaxy

    Hakkarainen, T., Toivonen, J., Sopanen, M. & Lipsanen, H., Feb 2002, In : Journal of Crystal Growth. 234, 4, p. 631-636 6 p.

    Research output: Contribution to journalArticleScientificpeer-review

  21. Published

    Determination of crystal misorientation in epitaxial lateral overgrowth of GaN

    Chen, W. M., McNally, P. J., Jacobs, K., Tuomi, T., Danilewsky, A. N., Zytkiewicz, Z. R., Lowney, D., Kanatharana, J., Knuuttila, L. & Riikonen, J., 2002, In : Journal of Crystal Growth. 243, p. 94-102

    Research output: Contribution to journalArticleScientificpeer-review

  22. Published

    Secondary nucleation due to crystal-impeller and crystal-vessel collisions by population balances in CFD-modelling

    Liiri, M., Koiranen, T. & Aittamaa, J., 2002, In : Journal of Crystal Growth. 237-239, p. 2188-2193

    Research output: Contribution to journalArticleScientificpeer-review

  23. Published

    Synchrotron X-ray topography of undoped VCz GaAs crystals

    Tuomi, T., Knuuttila, L., Riikonen, J., McNally, P. J., Chen, W-M., Kanatharana, J., Neubert, M. & Rudolph, P., 2002, In : Journal of Crystal Growth. 237-239, p. 350-355

    Research output: Contribution to journalArticleScientificpeer-review

  24. Published

    Vacancies as compensating centers in bulk GaN: Doping effects

    Saarinen, K., Ranki, V., Suski, T., Bockowski, M. & Grzegory, I., 2002, In : Journal of Crystal Growth. 246, p. 281-286

    Research output: Contribution to journalArticleScientificpeer-review

  25. 2001
  26. Published

    Effect of substrate misorientation of deep levels in SSMBE GaInP

    Orsila, S., Tukiainen, A., Dekker, J. & Pessa, M., 2001, In : Journal of Crystal Growth. 227

    Research output: Contribution to journalArticleScientificpeer-review

  27. Published

    Nature and occurrence of defects in 6H-SiC Lely crystals

    Tuominen, M., Ellison, A., Tuomi, T., Yakimova, R., Milita, S. & Janzén, E., 2001, In : Journal of Crystal Growth. 225, p. 23-33

    Research output: Contribution to journalArticleScientificpeer-review

  28. Published

    Optical and electrical properties of Be doped GaN bulk crystals

    Suski, T., Litwin-Staszewska, E., Perlin, P., Wisniewski, P., Teisseyre, H., Grzegory, I., Bockowski, M., Porowski, S., Saarinen, K. & Nissilä, J., 2001, In : Journal of Crystal Growth. 230

    Research output: Contribution to journalArticleScientificpeer-review

  29. Published

    Oxygen incorporation into GaInP grown by SSMBE

    Xiang, N., Tukiainen, A., Dekker, J. & Pessa, M., 2001, In : Journal of Crystal Growth. 227

    Research output: Contribution to journalArticleScientificpeer-review

  30. 2000
  31. Published

    High nitrogen composition GaAsN by atmospheric pressure metalorganic vapor-phase epitaxy

    Toivonen, J., Hakkarainen, T., Sopanen, M. & Lipsanen, H., Dec 2000, In : Journal of Crystal Growth. 221, 1-4, p. 456-460 5 p.

    Research output: Contribution to journalArticleScientificpeer-review

  32. 1999
  33. Published

    Purification by crystallization from solutions of various viscosities

    Sha, Z. L., Alatalo, H., Louhi-Kultanen, M. & Palosaari, S., 1999, In : Journal of Crystal Growth. 198-199, PART I, p. 692-696 5 p.

    Research output: Contribution to journalArticleScientificpeer-review

  34. Published

    The modelling and simulation of dissolution of sucrose crystals

    Koiranen, T., Kilpiö, T., Nurmi, J. & Norden, H. V., 1999, In : Journal of Crystal Growth. 198/199, p. 749-753

    Research output: Contribution to journalArticleScientificpeer-review

  35. 1998
  36. Published

    Sulphur doping of GaSb grown by atmospheric pressure MOVPE

    Novak, J., Hasenöhrl, S., Kucera, M., Hjelt, K. & Tuomi, T., 1998, In : Journal of Crystal Growth. 183, p. 69-74

    Research output: Contribution to journalArticleScientificpeer-review

  37. 1997
  38. Published

    Photoluminescence and electrical properties of MOVPE-grown zinc-doped gallium antimonide on gallium arsenide

    Hjelt, K. & Tuomi, T., 1997, In : Journal of Crystal Growth. 170, p. 794-798

    Research output: Contribution to journalArticleScientificpeer-review

  39. Published

    Time-dependent simulation of Czochralski silicon crystal growth

    Järvinen, J., Nieminen, R. & Tiihonen, T., 1997, In : Journal of Crystal Growth. 180, p. 468-476

    Research output: Contribution to journalArticleScientificpeer-review

  40. Published

    Visible Light Emission from MBD-grown Si/SiO2 Superlattices

    Novikov, S., Sinkkonen, J., Kilpelä, O. & Gastev, S., 1997, In : Journal of Crystal Growth. 175/176, p. 514-518

    Research output: Contribution to journalArticleScientificpeer-review

  41. 1996
  42. Published

    Metalorganic vapor phase epitaxial growth of A1GaSb and A1GaAsSb using all-organometallic sources

    Koljonen, T., Sopanen, M., Lipsanen, H. & Tuomi, T., 1 Dec 1996, In : Journal of Crystal Growth. 169, 3, p. 417-423 7 p.

    Research output: Contribution to journalArticleScientificpeer-review

  43. Published

    Crystallization kinetics of potassium sulfate in an MSMPR stirred crystallizer

    Sha, Z. L., Hatakka, H., Louhi-Kultanen, M. & Palosaari, S., Sep 1996, In : Journal of Crystal Growth. 166, 1-4, p. 1105-1110 6 p.

    Research output: Contribution to journalArticleScientificpeer-review

  44. Published

    Defect analysis in Lely grown 6H SiC

    Tuominen, M., Prieur, E., Yakimova, R., Glass, R., Tuomi, T. & Janzen, E., 1996, In : Journal of Crystal Growth. 165, p. 233-244

    Research output: Contribution to journalArticleScientificpeer-review

  45. Published

    Self-compensation in halogen doped CdTe grown by molecular beam epitaxy

    Fischer, F., Waag, A., Worschech, L., Ossau, W., Scholl, S., Landwehr, G., Mäkinen, J., Hautojärvi, P. & Corbel, C., 1996, In : Journal of Crystal Growth. 161, p. 214-218

    Research output: Contribution to journalArticleScientificpeer-review

  46. 1995
  47. Published

    Gas-source molecular beam epitaxy of lattice-matched Ga_(x)In_(1-x)As_(y)P_(1-y) on GaAs over the entire composition range

    Zhang, G., Pessa, M., Hjelt, K., Collan, H. & Tuomi, T., 1995, In : Journal of Crystal Growth. 150, p. 607-611

    Research output: Contribution to journalArticleScientificpeer-review

  48. 1994
  49. Published

    Growth of GaInAsSb using tertiarybutylarsine as arsenic source

    Sopanen, M., Koljonen, T., Lipsanen, H. & Tuomi, T., 2 Dec 1994, In : Journal of Crystal Growth. 145, 1-4, p. 492-497 6 p.

    Research output: Contribution to journalArticleScientificpeer-review

  50. Published

    Photoluminescence of buried InGaAs grown on nanoscale InP islands by MOVPE

    Lipsanen, H., Ahopelto, J., Koljonen, T. & Sopanen, M., 2 Dec 1994, In : Journal of Crystal Growth. 145, 1-4, p. 988-989 2 p.

    Research output: Contribution to journalArticleScientificpeer-review

  51. Published

    Crystalline imperfections in 4H SiC grown with a seeded Lely method

    Tuominen, M., Yakimova, R., Glass, R. C., Tuomi, T. & Janzen, E., 1994, In : Journal of Crystal Growth. 144, p. 267-276

    Research output: Contribution to journalArticleScientificpeer-review

  52. Published

    Photoluminescene of buried InGaAs grown on nanoscale InP islands by MOVPE

    Lipsanen, H., Ahopelto, J., Koljonen, T. & Sopanen, M., 1994, In : Journal of Crystal Growth. 145, p. 988-989

    Research output: Contribution to journalArticleScientificpeer-review

  53. 1993
  54. Published

    Synchrotron Topograpic Study of Defects in Liquid-encapsulated Czochralski-grown semi-insulating Gallium Arsenide Wafers

    Prieur, E., Tuomi, T., Partanen, J., Yli-Juuti, E. & Tilli, M., 1993, In : Journal of Crystal Growth. 132, p. 599-605

    Research output: Contribution to journalArticleScientificpeer-review

  55. 1991
  56. Published

    X-ray diffraction analysis of superlattices grown on misoriented substrates

    Ravila, P., Airaksinen, V. M., Lipsanen, H., Tuomi, T. & Claxton, P. A., 1 Dec 1991, In : Journal of Crystal Growth. 114, 4, p. 569-572 4 p.

    Research output: Contribution to journalArticleScientificpeer-review

  57. 1990
  58. Published

    Purification of organic crystals by high-pressure sweating

    Louhi-Kultanen, M., Kaipainen, E., Niemi, H., Silventoinen, I. & Palosaari, S., Jan 1990, In : Journal of Crystal Growth. 99, 1 -4 pt 2, p. 1147-1150 4 p.

    Research output: Contribution to journalArticleScientificpeer-review

  59. 1989
  60. Published

    Synchrotron section topographic study of defects in InP substrates and quaternary laser structures

    Tuomi, T., Lipsanen, H., Ranta-aho, T., Partanen, J., Lahtinen, J. A., Monberg, E. & Logan, R. A., Aug 1989, In : Journal of Crystal Growth. 96, 4, p. 881-887 7 p.

    Research output: Contribution to journalArticleScientificpeer-review

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