ECS Journal of Solid State Science and Technology

Research outputs

  1. 2020
  2. Published

    Source/Drain Materials for Ge nMOS Devices: Phosphorus Activation in Epitaxial Si, Ge, Ge_(1-x)Sn_x and Si_yGe_(1-x-y)Sn_x

    Vohra, A., Makkonen, I., Pourtois, G., Slotte, J., Porret, C., Rosseel, E., Khanam, A., Tirrito, M., Douhard, B., Loo, R. & Vandervorst, W., 7 May 2020, In : ECS Journal of Solid State Science and Technology. 9, 4, p. 1-13 13 p.

    Research output: Contribution to journalArticleScientificpeer-review

  3. 2018
  4. Published

    On the Evolution of Strain and Electrical Properties in As-Grown and Annealed Si: P Epitaxial Films for Source-Drain Stressor Applications

    Dhayalan, S. K., Kujala, J., Slotte, J., Pourtois, G., Simoen, E., Rosseel, E., Hikavyy, A., Shimura, Y., Loo, R. & Vandervorst, W., 2018, In : ECS Journal of Solid State Science and Technology. 7, 5, p. P228-P237 10 p.

    Research output: Contribution to journalArticleScientificpeer-review

  5. 2017
  6. Published

    Indium tin oxide-free small molecule organic solar cells using single-walled carbon nanotube electrodes

    Delacou, C., Jeon, I., Seo, S., Nakagawa, T., Kauppinen, E. I., Maruyama, S. & Matsuo, Y., 2017, In : ECS Journal of Solid State Science and Technology. 6, 6, p. M3181-M3184

    Research output: Contribution to journalArticleScientificpeer-review

  7. 2016
  8. Published

    Review-Defect Identification with Positron Annihilation Spectroscopy in Narrow Band Gap Semiconductors

    Slotte, J., Makkonen, I. & Tuomisto, F., 2016, In : ECS Journal of Solid State Science and Technology. 5, 4, p. P3166-P3171 6 p.

    Research output: Contribution to journalLiterature reviewScientificpeer-review

ID: 226138