The next generation of power electronics? Gallium nitride doped with beryllium: How to cut down energy loss in power electronics? The right kind of doping

Press/Media: Media appearance

References

TitleThe next generation of power electronics? Gallium nitride doped with beryllium: How to cut down energy loss in power electronics? The right kind of doping
Media name/outletNanotechnology News
CountryUnited States
Date09/11/2017
URLwww.nanotech-now.com/news.cgi?story_id=54826
PersonsFilip Tuomisto
Period9 Nov 2017

ID: 17971407