The Next Generation of Power Electronics? Gallium Nitride Doped with Beryllium

Press/Media: Media appearance

References

TitleThe Next Generation of Power Electronics? Gallium Nitride Doped with Beryllium
Media name/outletScienceNewsline
CountryUnited States
Date10/11/2017
URLwww.sciencenewsline.com/news/2017111000570008.html
PersonsFilip Tuomisto
Period10 Nov 2017

ID: 27041589