The next generation of power electronics? Gallium nitride doped with beryllium: How to cut down energy loss in power electronics? The right kind of doping

Press/Media: Media appearance

Period9 Nov 2017

Media coverage

1

Media coverage

  • TitleThe next generation of power electronics? Gallium nitride doped with beryllium: How to cut down energy loss in power electronics? The right kind of doping
    Media name/outletNanotechnology News
    CountryUnited States
    Date09/11/2017
    URLwww.nanotech-now.com/news.cgi?story_id=54826
    PersonsFilip Tuomisto